First stages of surface steel nitriding: X-ray photoelectron spectroscopy and electrical measurementsFLORI, M; GRUZZA, B; BIDEUX, L et al.Applied surface science. 2009, Vol 255, Num 22, pp 9206-9210, issn 0169-4332, 5 p.Article

Effect of surface roughness on EPES and AREPES measurements : Flat and crenels silicon surfacesCHELDA, S; ROBERT-GOUMET, C; GRUZZA, B et al.Surface science. 2008, Vol 602, Num 12, pp 2114-2120, issn 0039-6028, 7 p.Article

A study of the 42CrMo4 steel surface by quantitative XPS electron spectroscopyFLORI, M; GRUZZA, B; BIDEUX, L et al.Applied surface science. 2008, Vol 254, Num 15, pp 4738-4743, issn 0169-4332, 6 p.Article

XPS study of the O₂/SF₆ microwave plasma oxidation of (0 0 1 ) GaAs surfacesMONIER, G; BIDEUX, L; DESPLATS, O et al.Applied surface science. 2009, Vol 256, Num 1, pp 56-60, issn 0169-4332, 5 p.Article

Monte Carlo simulation for Multi-Mode Elastic Peak Electron Spectroscopy of crystalline materials: Effects of surface structure and excitationGRUZZA, B; CHELDA, S; ROBERT-GOUMET, C et al.Surface science. 2010, Vol 604, Num 2, pp 217-226, issn 0039-6028, 10 p.Article

XPS study of the formation of ultrathin GaN film on GaAs(1 0 0)BIDEUX, L; MONIER, G; MATOLIN, V et al.Applied surface science. 2008, Vol 254, Num 13, pp 4150-4153, issn 0169-4332, 4 p.Article

Combined EELS, LEED and SR-XPS study of ultra-thin crystalline layers of indium nitride on InP(1 0 0)- : Effect of annealing at 450 °CROBERT-GOUMET, C; PETIT, M; BIDEUX, L et al.Applied surface science. 2007, Vol 253, Num 9, pp 4445-4449, issn 0169-4332, 5 p.Article

Passivation of InP(100) substrates : first stages of nitridation by thin InN surface overlayers studied by electron spectroscopiesPETIT, M; ROBERT-GOUMET, C; BIDEUX, L et al.Surface and interface analysis. 2005, Vol 37, Num 7, pp 615-620, issn 0142-2421, 6 p.Article

Growth study of thin indium nitride layers on InP (10 0) by Auger electron spectroscopy and photoluminescenceBEN KHALIFA, S; SAIDI, F; GRUZZA, B et al.Journal of crystal growth. 2009, Vol 311, Num 9, pp 2608-2614, issn 0022-0248, 7 p.Article

Interaction of hydrogen with InN thin films elaborated on InP(100)KRAWCZYK, M; BILINSKI, A; SOBCZAK, J. W et al.Surface science. 2007, Vol 601, Num 18, pp 3722-3725, issn 0039-6028, 4 p.Conference Paper

Surface modification of GaAs during argon ionic cleaning and nitridation: EELS, EPES and XPS studiesBIDEUX, L; BACA, D; GRUZZA, B et al.Surface science. 2004, Vol 566-68, pp 1158-1162, issn 0039-6028, 5 p., 2Conference Paper

IMFP measurements near Au-Ni alloy surfaces by EPES: indirect evidence of submonolayer Au surface enrichmentKRAWCZYK, M; ZOMMER, L; SOBCZAK, J. W et al.Surface science. 2004, Vol 566-68, pp 856-861, issn 0039-6028, 6 p., 2Conference Paper

Passivation of GaAs(001) surface by the growth of high quality c-GaN ultra-thin film using low power glow discharge nitrogen plasma sourceMONIER, G; BIDEUX, L; ROBERT-GOUMET, C et al.Surface science. 2012, Vol 606, Num 13-14, pp 1093-1099, issn 0039-6028, 7 p.Article

XPS, EPMA and microstructural analysis of a defective industrial plasma-nitrided steelFLAN, M; GRUZZA, B; BIDEUX, L et al.Surface & coatings technology. 2008, Vol 202, Num 24, pp 5887-5894, issn 0257-8972, 8 p.Article

Study of porous III-V semiconductors by electron spectroscopies (AES and XPS) and optical spectroscopy (PL) : Effect of ionic bombardment and nitridation processKHALIFA, S. Ben; GRUZZA, B; MAAREF, H et al.Surface science. 2007, Vol 601, Num 18, pp 4531-4535, issn 0039-6028, 5 p.Conference Paper

Development of Monte-Carlo simulations for nano-patterning surfaces associated with MM-EPES analysis Application to different Si(111) nanoporous surfacesROBERT-GOUMET, C; MAHJOUB, M. A; MONIER, G et al.Surface science. 2013, Vol 618, pp 72-77, issn 0039-6028, 6 p.Article

Comparison of InP Schottky diodes based on Au or Pd sensing electrodes for NO₂ and O₃ sensingVARENNE, C; NDIAYE, A; BRUNET, J et al.Solid-state electronics. 2012, Vol 72, pp 29-37, issn 0038-1101, 9 p.Article

SEM and XPS studies of nanohole arrays on InP(1 0 0) surfaces created by coupling AAO templates and low energy Ar⁺ ion sputteringROBERT-GOUMET, C; MONIER, G; ZEFACK, B et al.Surface science. 2009, Vol 603, Num 19, pp 2923-2927, issn 0039-6028, 5 p.Article

Morphology and optical properties of p-type porous GaAs(1 00) layers made by electrochemical etchingBEN KHALIFA, S; GRUZZA, B; ROBERT-GOUMET, C et al.Journal of luminescence. 2008, Vol 128, Num 10, pp 1611-1616, issn 0022-2313, 6 p.Article

Fast Growth Synthesis of GaAs Nanowires with Exceptional LengthRAMDANI, M. R; GIL, E; LEROUX, Ch et al.Nano letters (Print). 2010, Vol 10, Num 5, pp 1836-1841, issn 1530-6984, 6 p.Article